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| PZTA13, PZTA14 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: PZTA63, PZTA64 (PNP) 4 Type PZTA13 PZTA14 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 3 2 1 VPS05163 Marking PZTA 13 PZTA 14 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCES VCBO VEBO Values 30 30 10 Unit V IC ICM IB IBM Ptot Tj Tstg 300 500 100 200 1.5 150 -65 ... 150 mA mA W C 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 PZTA13, PZTA14 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, VBE = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics VBEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CES typ. max. Unit 30 30 10 - - 100 10 100 V nA A nA - PZTA13 PZTA14 PZTA13 PZTA14 VCEsat 5000 10000 10000 20000 - - 1.5 2 V Transition frequency I C = 50 mA, V CE = 5 V, f = 100 MHz fT 125 - - MHz 1) Pulse test: t 300s, D = 2% 2 Nov-30-2001 PZTA13, PZTA14 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V, f = 100MHz 1650 mW 10 3 MHz fT 5 PZTA 13/14 EHP00717 1350 1200 P tot 1050 900 750 600 450 300 150 0 0 15 30 45 60 75 90 105 120 10 2 5 C 150 TS 10 1 10 0 5 10 1 5 10 2 mA 10 3 C Collector cutoff current ICBO = f (TA) VCB = 30V PZTA 13/14 EHP00718 DC current gain hFE = f (I C) VCE = 5V 10 6 h FE 5 PZTA 13/14 EHP00719 10 4 nA CB0 10 3 5 max 10 5 typ 5 -55 C 10 4 125 C 25 C 10 2 5 10 1 5 5 10 0 0 50 100 TA C 150 10 3 10 -1 10 0 10 1 10 2 mA 10 3 C 3 Nov-30-2001 PZTA13, PZTA14 Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 10 3 mA PZTA 13/14 EHP00720 Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 10 3 mA PZTA 13/14 EHP00721 C 150 C 25 C -50 C C 150 C 25 C -50 C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 0.5 1.0 V V CEsat 1.5 10 0 0 1.0 2.0 V V BEsat 3.0 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC PZTA 13/14 EHP00311 D= tp T tp T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 4 Nov-30-2001 |
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